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| 2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features * * * * * High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2225 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 1500 20 2 7 2 50 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 1500 -- -- 2.0 -- 0.45 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 9 0.75 990 125 60 17 50 150 50 0.9 1750 Max -- 1 500 4.0 12 -- -- -- -- -- -- -- -- -- -- Unit V A A V S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 20 A, VGS = 0, diF / dt = 100 A / s Test conditions I D = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS =1200 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 1 A VGS = 15 V*1 ID = 1 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK2225 Power vs. Temperature Derating 80 Pch (W) I D (A) 10 3 1 0.3 0.1 0.03 Ta = 25 C 0 50 100 Case Temperature 150 Tc (C) 200 0.01 10 30 100 300 1000 3000 10000 Drain to Source Voltage V DS (V) C D Maximum Safe Operation Area 10 s 0 10 PW = 60 1 10 m s s s m (1 Channel Dissipation O Drain Current pe 40 sh 20 Operation in this area is limited by R DS(on) tio ra n c (T = ot ) 25 ) C Typical Output Characteristics 5 Pulse Test 7V 3 6V ID 1.2 (A) 1.6 15 V 2.0 10 V 8V Typical Transfer Characteristics Drain Current I D (A) 4 V DS = 25 V Pulse Test 2 Drain Current 0.8 Tc = 75 C 25 C -25 C 1 5V VGS = 4 V 0.4 0 20 40 60 Drain to Source Voltage 80 100 V DS (V) 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 3 2SK2225 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 40 I D= 3 A 30 2A 1A 0.5 A 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20 Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 50 Static Drain to Source State Resistance vs. Drain Current 50 20 10 5 VGS = 10 V 15 V 20 2 Pulse Test 1 0.5 0.1 10 0.2 0.5 1 Drain Current 2 5 I D (A) 10 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 20 I D= 2 A Forward Transfer Admittance vs. Drain Current 10 5 2 1 0.5 V DS = 25 V Pulse Test Tc = -25 C 25 C 75 C 16 12 0.5 A, 1 A 8 4 0 -40 VGS = 15 V Pulse Test 0 40 80 120 160 Case Temperature Tc (C) 0.2 0.1 0.05 0.1 0.2 0.5 1 2 5 Drain Current I D (A) 4 2SK2225 Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 5000 Reverse Recovery Time trr (ns) 2000 1000 500 Capacitance C (pF) VGS = 0 f = 1 MHz 1000 Ciss 200 100 50 di / dt = 100 A / s, Ta = 25 C V GS = 0, Pulse Test 100 Coss Crss 10 0.05 0.1 0.2 0.5 1 2 Reverse Drain Current I DR (A) 5 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V GS (V) 1000 Switching Characteristics 20 1000 500 V DS (V) 800 16 VGS 12 Switching Time t (ns) V DD = 250 V 400 V 600 V VDS t d(off) 200 100 V GS = 10 V PW = 2 s duty < 1 % Drain to Source Voltage 600 Gate to Source Voltage tf 50 400 8 V DD = 250 V 400 V 600 V tr t d(on) 200 I D = 2.5 A 4 20 10 0 20 40 60 80 Gate Charge Qg (nc) 0 100 0.05 0.1 0.2 0.5 Drain Current 1 2 I D (A) 5 5 2SK2225 Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current I DR (A) Pulse Test 4 3 2 1 10 V, 15 V V GS = 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.05 0.1 ch - c(t) = s (t) * ch - c ch - c = 2.50 C/W, Tc = 25 C PDM 0.03 0.02 0.01 1s t ho D= PW T PW T pu lse 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 6 2SK2225 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform 90% 7 Unit: mm 5.0 0.3 15.6 0.3 3.2 + 0.4 - 0.2 5.5 0.3 2.7 1.0 0.2 5.45 0.5 5.45 0.5 21.0 0.5 4.0 2.6 1.4 Max 5.0 19.9 0.3 3.2 1.6 1.4 Max 0.6 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PFM -- -- 5.6 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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